D1083UK - Seme LAB

D1083UK METAL GATE RF SILICON FET

TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) SEME D1083UK METAL GATE RF SILICON FET 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13dB MINIMUM • SURFACE MOUNT APPLICATIO.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 13dB MINIMUM
• SURFACE MOUNT APPLICATIONS TO
  –263 PACKAGE PIN 1
  – GATE PIN 3
  – SOURCE PIN 2
  – DRAIN PIN 4
  – DRAIN
• LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain
  – Source Breakdown Voltage Gate
  – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A
  –65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax .