D1036UK - Seme LAB

D1036UK METAL GATE RF SILICON FET

TetraFET D1036UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B 1 2 4 3 M G C D E F HK PIN 1 PIN 3 SOURCE SOURCE DM PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 Dia. F 5.71 G 12.7 Dia. H 6.60 I 0.13 J 4.32 K 3.17 M 26.16 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 I.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 13 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 175W BVDSS Drain
  – Source Breakdown Voltage 70V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 25A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package.