TetraFET D1025UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED PIN 1 PIN 3 PIN 5 H I FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 .
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
175W
BVDSS
Drain
– Source Breakdown Voltage
70V
BVGSS
Gate
– Source Breakdown Voltage
±20V
ID(sat)
Drain Current
25A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dim.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1025 |
SavantIC |
Silicon NPN Power Transistors | |
2 | D1020 |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | D1020 |
NEC |
NPN Silicon Transistor | |
4 | D1020UK |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | D1021UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D1022 |
Seme LAB |
METAL GATE RF SILICON FET | |
7 | D1022UK |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | D1023 |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | D1023UK |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | D1024UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D1027UK |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | D1028 |
Seme LAB |
METAL GATE RF SILICON FET |