CY-62146DV30 - Cypress

CY-62146DV30 4-Mbit (256K x 16) Static RAM

1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has Logic Block Diagram AA190 A8 A7 A6 A5 A4 A3 A2 AA01 DA.

Features

• Very high speed: 45 ns
• Wide voltage range: 2.20V
  –3.60V
• Pin-compatible with CY62146CV30
• Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax
• Ultra low standby power
• Easy memory expansion with CE, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered 48-ball BGA and 44-pin TSOPII
• Also available in Lead-free packages Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design .