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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING 10.5MAX. 1.2 Dimensions in mm 2.8 5.2 5.0 17 φ 3.2 3.8MAX. 1.3MAX. 13.5MIN. 0.8 8.5 2.54 2.54 4.7MAX. 0.5 2.6 q w e w q q GATE w COLLECTOR e EMITTER ¡VCES ..... 400V.
GE = ±40V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0
Unit V µA µA V
Feb.1999
Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT40TMH-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1500µF 160 TC < = 70°C
PULSE COLLECTOR CURRENT ICM (A)
120
80
40
0
0
10
20
30
40
50
GATE-EMITTER VOLTAGE VGE (V)
Figure 1
APPLICATION EXAMPLE
TRIGGER Vtrig SIGNAL
IXe
CM Vtrig
+
–
VCM
IGBT GATE.
CT40TMH-8 - Mitsubishi Electric Semiconductor
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING 10.5MAX. 1.2 Dim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CT40 |
Continental Device India Limited |
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD |
|
| 2 | CT40KM-8H |
Renesas |
Nch IGBT |
|
| 3 | CT41 |
Continental Device India Limited |
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD |
|
| 4 | CT411-202 |
AMRAN |
Rectangle Plastic-Cased Current Transformers |
|
| 5 | CT411-252 |
AMRAN |
Rectangle Plastic-Cased Current Transformers |
|
| 6 | CT411-302 |
AMRAN |
Rectangle Plastic-Cased Current Transformers |
|
| 7 | CT411-322 |
AMRAN |
Rectangle Plastic-Cased Current Transformers |
|
| 8 | CT411-402 |
AMRAN |
Rectangle Plastic-Cased Current Transformers |
|
| 9 | CT411-502 |
AMRAN |
Rectangle Plastic-Cased Current Transformers |
|
| 10 | CT415 |
CT Micro |
Photodarlington Optocoupler |
|
| 11 | CT415A |
CT Micro |
Photodarlington Optocoupler |
|
| 12 | CT415B |
CT Micro |
Photodarlington Optocoupler |
|