Collector - Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Collector Dissipation(Tc=25°C ) Operating & Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj, Tstg VALUE 100 60 5 5 30 -55 to +150 UNIT V V V A W ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION Collector - Base Voltage .
A, VCE=10V IC=0.3A, VCE=10V MIN 100 60 5 70 TYP 0.75 20 MAX 5 240 2.0 1.5 UNIT V V V mA V V V MHz Classification hFE O 70 - 140 Y 120 - 240 Continental Device India Limited Data Sheet 1 of 3 CSD73 TO - 220 Plastic Package TO-220 Plastic Package B F C E 1 2 3 D G J M 4 DIM MIN MAX A 14.42 16.51 9.63 10.67 B 3.56 4.83 C — 0.90 D 1.15 1.40 E 3.75 3.88 F 2.29 2.79 G 2.54 3.43 H — 0.56 J 12.70 14.73 K 2.80 4.07 L 2.03 2.92 M — 31.24 N 7 DEG O All diminsions in mm. H A N L K O O 1 2 3 TO-220 Tube Packing Label 536.00 ±1.5 Pin Configuration 1. Base 2. Collector 3. Emitter 4. Col.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD75204W15 |
ETCTI |
P-Channel CSP NexFET Power MOSFETs (Rev. A) | |
2 | CSD75205W1015 |
ETCTI |
P-Channel CSP NexFET Power MOSFET (Rev. B) | |
3 | CSD75207W15 |
ETCTI |
CSD75207W15 Dual P-Channel NexFET Power MOSFET (Rev. A) | |
4 | CSD75208W1015 |
ETCTI |
CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET | |
5 | CSD-4xxx |
ETC |
NUMERIC/ALPHANUMBERIC DISPLAY | |
6 | CSD-822A9 |
China Semiconductor |
(CSD-822A9 / CSD-823A9) Digits Display | |
7 | CSD-822B7 |
China Semiconductor |
(CSD-822B7 / CSD-823B7) Digits Display | |
8 | CSD-822E |
China Semiconductor |
(CSD-822E / CSD-823E) Digits Display | |
9 | CSD-822G |
China Semiconductor |
(CSD-822G / CSD-823G) Digits Display | |
10 | CSD-822M9 |
China Semiconductor |
(CSD-822M9 / CSD-823M9) Digits Display | |
11 | CSD-822S |
China Semiconductor |
(CSD-822S / CSD-823S) Digits Display | |
12 | CSD-822T9 |
China Semiconductor |
(CSD-822T9 / CSD-823T9) Digits Display |