CSD545 - CDIL

CSD545 NPN SILICON EPITAXIAL TRANSISTOR

SYMBOL BVCEO Collector Emitter Voltage BVCBO Collector Base Voltage BVEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak PD Colector Power Dissipation , T Operating And Storage Junction j Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN BVCEO IC=1mA,IB=0 Collector Emit.

Features

5 to +150 UNIT V V V A A mW ºC TYP MAX UNIT V V V µA µA 60 30 0.85 0.1 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage VBE(sat)
* IC=500mA,IB=50mA VCE(sat)
* IC=500mA,IB=50mA 1.2 0.3 V V ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN DYNAMIC CHARACTERISTICS Transition Frequency Collector Output Capacitance fT Cob IC=50mA, VCE=10V IE=0, VCB=10V f=1MHz TYP MAX UNIT 180 15 MHz pF CLASSIFICATION D hFE (1) 60-120
*Pulse Condition: Width < 300µs, Duty Cycle < 2%. Continental Device India Limited E 100-200 F 16.