CSD18509Q5B - Texas Instruments

CSD18509Q5B Power MOSFETs

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 40 ±20 100 UNIT V V ID Continuous Drain Curren.

Features

•1 Ultra-Low On Resistance
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package 2 Applications
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 150 17 VGS = 4.5 V 1.3 VGS = 10 V 1.0 1.8 UNIT V nC nC mΩ mΩ V Device CSD18509Q5B CSD18509Q5BT Ordering Information(1) .