With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combina.
• Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
• Zero Reverse Recovery Current / Forward
Recovery Voltage
• Temperature-Independent Switching Behavior
Package Types: TO-220-2 Marking: CSD01060A
Applications
• Industrial Switched Mode Power Supplies
• Uninterruptible & AUX Power Supplies
• Boost for PFC & DC-DC Stages
• Solar Inverters
Maximum Ratings (TC = 25°C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Pea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD01060 |
Cree |
Silicon Carbide Schottky Diode | |
2 | CSD01N650 |
CASS |
N-Channel Trench Power MOSFET | |
3 | CSD02060 |
CREE |
Silicon Carbide Schottky Diode | |
4 | CSD04060 |
CREE |
ZERO RECOVERY RECTIFIER | |
5 | CSD06060 |
ETC |
ZERO RECOVERY RECTIFIER | |
6 | CSD06060A |
ETC |
ZERO RECOVERY RECTIFIER | |
7 | CSD06060B |
ETC |
ZERO RECOVERY RECTIFIER | |
8 | CSD06060G |
ETC |
ZERO RECOVERY RECTIFIER | |
9 | CSD-4xxx |
ETC |
NUMERIC/ALPHANUMBERIC DISPLAY | |
10 | CSD-822A9 |
China Semiconductor |
(CSD-822A9 / CSD-823A9) Digits Display | |
11 | CSD-822B7 |
China Semiconductor |
(CSD-822B7 / CSD-823B7) Digits Display | |
12 | CSD-822E |
China Semiconductor |
(CSD-822E / CSD-823E) Digits Display |