CSC4115 - CDIL

CSC4115 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

SYMBOL VALUE BVCBO 40 Collector -Base Voltage BVCEO 20 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current ICP* 5.0 Collector Current Peak PC 0.4 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range *Single Pulse Pw=10ms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specifi.

Features

hFE VCE=2V, IC=0.1A 120 DC Current Gain VCE(Sat) IC=2A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V, IC=0.5A, Transition Frequency f=100MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz Hfe Classifications A 120-270; B 180-390; C 270-560; UNIT V V V A A W deg C TYP 150 25 MAX 0.1 1.0 0.1 560 1.0 - UNIT V ataShee D V V uA uA uA V MHz pF "For BC" 180- 560 DataSheet4U.com Continental Device India Limited Data Sheet Page 1 of 3 DataSheet 4 U .com www.DataSheet4U.com TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack Styl.