CS8205E - CASS

CS8205E N-Channel Trench Power MOSFET

The CS8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features ● VDS = 19.5V,ID =4.2A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 36mΩ @ VGS =2.5V ● High Power and current handing capability.

Features

● VDS = 19.5V,ID =4.2A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 36mΩ @ VGS =2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● Battery protection
● Load switch
● Power management Schematic Diagram Marking and pin Assignment SOT23-6 top view Package Marking and Ordering Information Device Marking Device Device Package 8205E CS8205E SOT23-6 Reel Size Ø180mm Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Contin.