CS50N06 N MOSFET。 ,, 。、 PWM 、 。 Features ·VDSS =60V ·ID =50A ·RDS(ON)<10mΩ (VGS=10V) CS50N06 TO-220 1.Gate 2.Drain 3.Source : :0536-4930586 :0536-4930589 1、 ,Tc= 25℃ Symbol Parameter VDS VGS ID IDM① PD dv/dt③ dv/dt EAS② EAR① IAR① Tj Tstg : 1. TJ 2.L=0.23mH, IAS=50A, VDD=25V, RG=25 Ω, TJ = 25°C 3.ISD≤4.5A, di/dt≤200A/μs, VDD ≤ .
·VDSS =60V
·ID =50A
·RDS(ON)<10mΩ (VGS=10V)
CS50N06
TO-220 1.Gate 2.Drain 3.Source
:
:0536-4930586
:0536-4930589
1、 ,Tc= 25℃
Symbol
Parameter
VDS VGS ID IDM①
PD
dv/dt③
dv/dt
EAS② EAR① IAR①
Tj
Tstg
: 1. TJ 2.L=0.23mH, IAS=50A, VDD=25V, RG=25 Ω, TJ = 25°C 3.ISD≤4.5A, di/dt≤200A/μs, VDD ≤ BVDSS, TJ = 25°C
2、
- -
RθJC RθJA
CS50N06
Value 60 ±30 50 200 150 12 480 12 50 150
-55 ~150
Unit V V A A W
V/ns mJ mJ A ℃ ℃
1.25 62.5
℃/W
:
:0536-4930586
:0536-4930589
CS50N06
3、 ,,Tc= 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BVDSS
VGS= 0V,.
The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). T.
BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS ::、DC/DC 、。 Purpose: Suited for low voltage applications such as automotive,.
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1 | CS50N20ANH |
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7 | CS5016 |
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8 | CS50D |
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9 | CS50S |
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10 | CS5101 |
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11 | CS5101 |
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