CS40N20FA9H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which acc.
l Fast Switching l Low ON Resistance(Rdson≤0.065Ω) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: UPS,Inverter,Lighting. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recove.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS40N20FA9E |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS40N20A8 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS40N20ANH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS40N27 |
CASS |
N-Channel Trench Power MOSFET | |
5 | CS400 |
High Voltage Power Solutions |
High Voltage Bridge Rectifiers | |
6 | CS4041 |
Chips |
CHIP set | |
7 | CS4050V-01L |
Coilcraft |
Current Sense Transformers | |
8 | CS40D |
Diotec Semiconductor |
Schottky-Bridge Rectifiers | |
9 | CS40L100CT-A |
CITC |
Super Low Barrier High Voltage Power Rectifier | |
10 | CS40L60CT-A |
CITC |
Low Barrier Diode | |
11 | CS40S |
Diotec Semiconductor |
Surface Mount Schottky-Bridge Rectifiers | |
12 | CS40S45CT |
CITC |
Super Low Barrier High Voltage Power Rectifier |