CS3205A0 - Huajing Microelectronics

CS3205A0 Silicon N-Channel Power MOSFET

CS3205 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accord.

Features

l Fast Switching l Low ON Resistance(Rdson≤8mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:75pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 VGS EAS a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Ener.