CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 20 85 0.37 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effic.
l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:65nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS20N60A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS20N60AND |
TGW |
Silicon N-Channel Power MOSFET | |
3 | CS20N60ANH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS20N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS20N50A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS20N50ANH |
Huajing Discrete Devices |
Silicon N-Channel Power MOSFET | |
7 | CS20-12io1 |
IXYS |
Thyristor | |
8 | CS20-14io1 |
IXYS |
Thyristor | |
9 | CS20-16io1 |
IXYS |
Thyristor | |
10 | CS20-22moF1 |
IXYS |
High Voltage Phase Control Thyristor | |
11 | CS20-25mo1F |
IXYS |
High Voltage Phase Control Thyristor | |
12 | CS20-25moT1 |
IXYS |
High Voltage Phase Control Thyristor |