CS16N60 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 16 180 0.41 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effici.
l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS16N60FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS16N65A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS1600 |
Cirrus Logic |
Low-cost PFC Controller | |
4 | CS1601-7R |
Power-One |
100 Watt DC-DC Converters | |
5 | CS1608 |
ETC |
Typical Performance Characteristics | |
6 | CS1615M |
JILIN SINO |
Thyristors | |
7 | CS1615M1A |
JILIN SINO |
Thyristors | |
8 | CS1621 |
GSW |
LCD drive control | |
9 | CS1621 |
Siyang Microelectronics |
LCD display driver | |
10 | CS1621 |
ETC |
LCD display driver | |
11 | CS16210 |
I-CORE |
16 parallel output static VFD driver | |
12 | CS16210EP |
Semico |
CS16210EP |