CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 500 15 70 0.3 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effici.
l Fast Switching l Low ON Resistance(Rdson≤0.4Ω) l Low Gate Charge (Typical Data:50nC) l Low Reverse transfer capacitances(Typical:25.5pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS15N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS15-E2GA472MYNS |
TDK |
Disk Ceramic Capacitors | |
3 | CS1501 |
Cirrus Logic |
Digital Power Factor Correction Controller | |
4 | CS1501-7R |
Power-One |
100 Watt DC-DC Converters | |
5 | CS1505U |
CUI |
CURRENT SENSOR | |
6 | CS150N03 |
Huajing |
Silicon N-Channel Power MOSFET | |
7 | CS150N03A8 |
Huajing |
Silicon N-Channel Power MOSFET | |
8 | CS150N03D8 |
Huajing |
Silicon N-Channel Power MOSFET | |
9 | CS150N04A8 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS150N95 |
CASS |
N-Channel Trench Power MOSFET | |
11 | CS1550BL |
CUI |
CURRENT SENSOR | |
12 | CS15E2GAxxxKYAS |
TDK |
Ceramic Capacitors |