CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 500 13 60 0.34 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi.
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS13N50FA9D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS13N50FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS13N50A8D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS13N50A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS13N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS13-E2GA332MYNS |
TDK |
Disk Ceramic Capacitors | |
7 | CS130 |
Coto |
CotoMOS | |
8 | CS13001 |
CAN SHENG |
TO-92 Plastic-Encapsulate Transistors | |
9 | CS13003 |
CS |
NPN Transistor | |
10 | CS1301 |
National Semiconductor |
(CS1301 / CS1311) Media Coprocessor | |
11 | CS1301-7R |
Power-One |
100 Watt DC-DC Converters | |
12 | CS131 |
Coto |
CotoMOS |