TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS20I30A Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices • Forward voltage: VFM = 0.49 V (max) @ IFM = 2.0 A • Forward current (AV): IF (AV) = 2.0 A • Repetitive peak reverse voltage: VRRM = 30 V • Suitable for high-density board assembly due to the use of.
3-2A1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ta = 48°C : Device mounted on a ceramic board Board size : 50 mm × 50 mm Soldering si.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CRS20I30B |
Toshiba |
Schottky Barrier Diode | |
2 | CRS20I40A |
Toshiba |
Schottky Barrier Diode | |
3 | CRS20I40B |
Toshiba |
Schottky Barrier Diode | |
4 | CRS20 |
PerkinElmer Optoelectronics |
SMD Reflective Sensor | |
5 | CRS2010 |
BOURNS |
High Power Anti-Surge Chip Resistor | |
6 | CRS2010A |
BOURNS |
High Power Anti-Surge Resistor | |
7 | CRS2512 |
BOURNS |
High Power Anti-Surge Chip Resistor | |
8 | CRS2512A |
BOURNS |
High Power Anti-Surge Resistor | |
9 | CRS01 |
Toshiba Semiconductor |
Schottky Barrier Rectifier | |
10 | CRS02 |
Toshiba Semiconductor |
Schottky Barrier Type Schottky Barrier Rectifier | |
11 | CRS03 |
Toshiba Semiconductor |
Schottky Barrier Rectifier | |
12 | CRS04 |
Toshiba Semiconductor |
SCHOTTKY BARRIER RECTIFIERS |