CRS10I30C - Toshiba

CRS10I30C Schottky Barrier Diode

Schottky Barrier Diode CRS10I30C 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features (1) Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board.

Features

(1) Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3. Packaging and Internal Circuit CRS10I30C 1: Anode 2: Cathode 3-2A1S 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) (Note 1) 1 A Non-repetitive peak forward surge current IFSM (Note 2) 30 Junction te.