The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (TVS) and when compared to a GDT offers lower voltage clamping levels and infinite surge life. Packaged in a transfer molde.
effect the protected system. When a transient occurs, the voltage across the CRXXXX will increase until the breakdown voltage (Vbr) is reached. At this point the device will operate in a similar way to a T.V.S. device and is in an avalanche mode. The voltage of the transient will now be limited and will only increase by a few volts as the device diverts more current. As this transient current rises, a level of current through the device is reached (Ibo) which causes the device to switch to a fully conductive state such that the voltage across the device is now only a few volts (Vt). The volta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CR2600SA |
Littelfuse |
The CR range of protectors are based on the proven technology of the T10 thyristor product | |
2 | CR2600SC |
Littelfuse |
The CR range of protectors are based on the proven technology of the T10 thyristor product | |
3 | CR2-005 |
Central Semiconductor |
2 AMP RECTIFIER | |
4 | CR2-010 |
Central Semiconductor |
2 AMP RECTIFIER | |
5 | CR2-020 |
Central Semiconductor |
2 AMP RECTIFIER | |
6 | CR2-040 |
Central Semiconductor |
2 AMP RECTIFIER | |
7 | CR2-060 |
Central Semiconductor |
2 AMP RECTIFIER | |
8 | CR2-080 |
Central Semiconductor |
2 AMP RECTIFIER | |
9 | CR2-100 |
Central Semiconductor |
2 AMP RECTIFIER | |
10 | CR2-120 |
Central Semiconductor |
2 AMP RECTIFIER | |
11 | CR2-150 |
Central Semiconductor |
2 AMP RECTIFIER | |
12 | CR2-160 |
Central Semiconductor |
SILICON RECTIFIER |