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Ordering number:ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =11dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. · Small and slim 6-pin package. · Large allowable collector dissipation (800mW max). 2 Package Dimensions unit:mm 2146A [CPH6001] 0.2 0.05 1.6 2..
· High gain : S21e =11dB typ (f=1GHz).
· High cutoff frequency : fT=6.7GHz typ.
· Small and slim 6-pin package.
· Large allowable collector dissipation (800mW max).
2
Package Dimensions
unit:mm 2146A
[CPH6001]
0.2 0.05 1.6 2.8 2.9 6 5 4 0.6 0.15
1
2
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions
0.7 0.9
0.2
3 0.95
0.6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CPH6001A |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | CPH6001A |
ON Semiconductor |
RF Transistor |
|
| 3 | CPH6002 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 4 | CPH6003A |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | CPH6003A |
ON Semiconductor |
RF Transistor |
|
| 6 | CPH6005 |
Sanyo Semicon Device |
High-Frequency Amplifier Applications |
|
| 7 | CPH6020 |
ON Semiconductor |
RF Transistor |
|
| 8 | CPH6021 |
ON Semiconductor |
RF Transistor |
|
| 9 | CPH6071 |
Sanyo Semicon Device |
Video Output Driver/High-Frequency Amplifier Applications |
|
| 10 | CPH6074 |
ON Semiconductor |
PNP Epitaxial Planar Silicon Transistor |
|
| 11 | CPH6101 |
Sanyo Semicon Device |
High-Current Switching Applications |
|
| 12 | CPH6102 |
Sanyo Semicon Device |
High-Current Switching Applications |
|