Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PROCESS Small Signal Transistor CP305 NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 11,212 PRINCIPAL DEVICE TYPES 2N3019 CMPT3019 CXT3019 CZT3019 EPITAXIAL PLANAR 31 x 31 MILS 9.0 MILS 5.9 x 1.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CP300 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
|
| 2 | CP300 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A |
|
| 3 | CP301 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
|
| 4 | CP301 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A |
|
| 5 | CP3010 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
|
| 6 | CP3010 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A |
|
| 7 | CP302 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
|
| 8 | CP302 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A |
|
| 9 | CP302-MPSH10 |
Central Semiconductor |
NPN - RF Transistor Die |
|
| 10 | CP3020-7R |
Power-One |
120...195 Watt DC-DC Converters |
|
| 11 | CP304 |
Pan Jit International Inc. |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
|
| 12 | CP304 |
TRSYS |
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A/ HEAT-SINK MTG 3A |
|