CNZ1413 - Panasonic Semiconductor

CNZ1413 Integrated Photosensors

Integrated Photosensors CNZ1413 Integrated Photosensors Overview CNZ1413 are ultraminiature, highly reliable transmissive photosensors consisting of a high-efficiency GaAs infrared light emitting diode chip that is integrated with a high-sensitivity Siintegrated-photodetector chip in a double molded resin package. Features Ultraminiature : 4.2 × 4.2 mm (heig.

Features

Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm) Fast response : tPHL = 2.5µs, tPLH = 6 µs (typ.) (ON1413A) Highly precise position detection (slit width : 0.3 mm) Gap width : 1.2 mm With attachment positioning pin Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Reverse voltage (DC) VR 6 V Input (Light Forward current (DC) emitting diode) IF 50 mA Power dissipation PD
*1 75 mW Output current IO 20 mA Output (Photo IC) Output voltage Supply voltage Power dissipation VO VCC PC
*2 30 17 200 V V mW Temperature Operating ambient temperature Topr
  –25 to +85 Stor.