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CMU401-VB CMU401-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.066 at VGS = - 10 V 0.080 at VGS = - 4.5 V ID (A)a - 20 - 18 Qg (Typ.) 40 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-251 S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS .
• TrenchFET® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Load Switch
TO-251
S
www.VBsemi.com
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
T.
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