CMT18N20 - Champion

CMT18N20 POWER FIELD EFFECT TRANSISTOR

This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ! ! FEATURES ! ! Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature Rugged – SOA is Power Dissipation Limited Source-to-Drain Characterized for U.

Features

! ! Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature Rugged
  – SOA is Power Dissipation Limited Source-to-Drain Characterized for Use With Inductive Loads PIN CONFIGURATION TO-220 SYMBOL Front View D GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number CMT18N20N220 Package TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to.