CMS-S035-080 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 0.889 * 0.889 mm2 Bond Pad size(B) : 0.762 * 0.762 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Metalization : Cathode Ti/Ni/Ag Sym. Spec. Limit Unit Maximum.
:
* Extremely low forward volts
* Guard ring protection
* Low reverse leakage current
A
B
Electrical Characteristics
Chip size(A):
0.889
* 0.889 mm2
Bond Pad size(B) :
0.762
* 0.762 mm2
Thickness :
300µm ± 20µm
Metalization : Anode Ti/Ni/Ag
Metalization : Cathode Ti/Ni/Ag
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt at IF : 1.0Amp. 25°C
VF max
0.83
Volt
Minimum Instantaneous Reverse Voltage at IR : 200 uA 25°C
VR min.
83
Minimum Non-repetitive Peak Surge current at 25°C
IFSM
30
Storage Temperature
TSTG
-65 to +125
Volt. Amp
°C
HsinChu Headquarter
5F, No. 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CMS-S035-020 |
Champion Microelectronic |
SCHOTTKY BARRIER DIODE | |
2 | CMS-S035-040 |
Champion Microelectronic |
SCHOTTKY BARRIER DIODE | |
3 | CMS-S035-060 |
Champion |
SCHOTTKY BARRIER DIODE | |
4 | CMS-S032-020 |
Champion Microelectronic |
SCHOTTKY BARRIER DIODE | |
5 | CMS-S032-040 |
Champion Microelectronic |
SCHOTTKY BARRIER DIODE | |
6 | CMS-S032-060 |
Champion |
SCHOTTKY BARRIER DIODE | |
7 | CMS-S040-020 |
Champion Microelectronic |
SCHOTTKY BARRIER DIODE | |
8 | CMS-S040-040 |
Champion |
SCHOTTKY BARRIER DIODE | |
9 | CMS-S040-040L |
Champion Microelectronic |
SCHOTTKY BARRIER DIODE | |
10 | CMS-S040-060 |
Champion |
SCHOTTKY BARRIER DIODE | |
11 | CMS-S040-080 |
Champion |
SCHOTTKY BARRIER DIODE | |
12 | CMS-S050-040 |
Champion |
SCHOTTKY BARRIER DIODE |