CMPD2838E - Central Semiconductor

CMPD2838E ENHANCED SPECIFICATION SURFACE MOUNT DUAL SILICON SWITCHING DIODES

The CENTRAL SEMICONDUCTOR CMPD2836E and CMPD2838E are Enhanced versions of the CMPD2836 and CMPD2838 High Speed Switching Diodes. These devices are manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 75V min to 120V min. S.

Features

ISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ♦ IR VR=80V 100 ♦ BVR IR=100µA 120 150 ♦ VF IF=10mA 0.72 0.85 ♦ VF IF=50mA 0.84 0.95 ♦ VF IF=100mA 0.92 1.0 CT VR=0, f=1.0MHz 1.5 4.0 trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 4.0 ♦ Enhanced specification UNITS nA V V V V pF ns R3 (25-January 2010) www.DataSheet4U.com CMPD2836E CMPD2838E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD2836E LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 MARKING CODE: CA2E CMPD2838E LEAD C.