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The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0 M.
10mA, IB=1.0mA
0.5
VBE(SAT)
IC=10mA, IB=1.0mA
0.8
hFE VCE=5.0V, IC=0.1mA 400 1200
hFE VCE=5.0V, IC=1.0mA
450
hFE VCE=5.0V, IC=10mA
400
fT
VCE=5.0V, IC=500μA, f=20MHz
50
Cob VCB=5.0V, IE=0, f=1.0MHz
4.0
Cib VBE=0.5V, IC=0, f=1.0MHz
10
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
450
1800
NF VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
2.0
UNITS V V V mA
mW °C °C/W
UNITS nA nA V V V V V
MHz pF pF
dB
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE1/hFE2
* VCE=5.0V, IC=1.0mA
0.9
1.0
|VBE1-VBE2| VCE=5.0V, IC=100μA
5.0 mV
* The lowest hFE reading is take.
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|---|---|---|---|---|
| 1 | CMKT5087 |
Central Semiconductor Corp |
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|
| 2 | CMKT5088 |
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| 3 | CMKT5078 |
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| 4 | CMKT2207 |
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| 6 | CMKT2907A |
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| 11 | CMKT3946 |
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| 12 | CMKD4448 |
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