CMH25N50 - VBsemi

CMH25N50 N-Channel Super Junction Power MOSFET

CMH25N50-VB www.VBsemi.com CMH25N50-VB Datasheet N-Channel 500V(D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 350 85 180 Single 0.080 Super-247 S D G D G S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gat.

Features

• Low Gate Charge Qg Results in Simple Drive Requirement Available
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Low RDS(on)
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VD.