CMD5950 - VBsemi

CMD5950 P-Channel MOSFET

CMD5950 CMD5950 Datasheet www.VBsemi.com P-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 100 0.033 0.036 - 40 Single FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC TO-252 S G GDS Top View Drain Connected to Tab D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 m.