CMD50N06B - Cmos

CMD50N06B N-Channel 60V MOSFET

The 50N06B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features 50A,60V.RDS(ON)=0.013Ω@VGS=10V N-channel-Enhancement mode Low Threshold Drive 100% Avalanche .

Features

50A,60V.RDS(ON)=0.013Ω@VGS=10V N-channel-Enhancement mode Low Threshold Drive 100% Avalanche Tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 60V RDSON 13m ID 50A Applications DC-DC & DC-AC Converters Motor Control, Audio Amplifiers High Current, High Speed Switching Primary Switch for 12V and 24V system TO252 / TO251 Pin Configuration GDS TO252 (CMD50N06B) G DS TO251 (CMU50N06B) Symbol VDS VGS ID@TC=25 ID@TC=100 IDM EAS IAS PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain C.