CMBD2835 - Continental Device India Limited

CMBD2835 SILICON PLANAR DUAL SWITCHING DIODES

Reverse Voltage CMBD2835 CMBD2836 Forward Current Total Device Dissipation Ta=25ºC * Derate above 25oC Thermal Resistance Junction to Ambient Total Device Dissipation Ta=25ºC ** Derate above 25oC Thermal Resistance Junction to Ambient Junction and Storage Temperature SYMBOL VR IF PD Rth(j-a) PD Rth(j-a) Tj, Tstg VALUE 35 75 100 225 1.8 556 300 2.4 417 - 55 t.

Features

otherwise) DESCRIPTION Reverse Breakdown Voltage SYMBOL VBR TEST CONDITION IR=100µA CMBD2835 CMBD2836 Reverse Voltage Leakage Current IR CMBD2835 VR=30V CMBD2836 VR=50V Diode Capacitance Forward Voltage CT VF VR=0V, f=1MHz IF = 10 mA IF = 50 mA IF = 100 mA IF=IR=10mA, iR(REC)=1.0 mA Data Sheet MIN 35 75 TYP MAX UNIT V V 100 nA 100 4.0 1.0 1.0 1.2 4.0 nA pF V V V ns Page 1 of 3 Reverse Recovery Time Continental Device India Limited trr CMBD2835 CMBD2836 www.DataSheet4U.com SOT-23 Formed SMD Package SOT-23 Formed SMD Package ±0.05 2.50 ± 0.02 0.60 ±0.025 1.30 ±0.02 0.60 SOT-23 Pack.