CM150DY-13T IGBT Module Datasheet

CM150DY-13T IGBT Module

CM150DY-13T HIGH POWER SWITCHING USE INSULATED TYPE dual switch (half-bridge) Collector current IC .............…...… 1 5 0 A Collector-emitter voltage VCES ... 6 5 0 V Maximum junction temperature T v j m a x ......... 1 7 5 °C ●dual switch (half-bridge) ●Copper base plate (Nickel-plating) ●Tin-plating tab term.

Features

No.	Partie #	Fabricant	Description
1	CM150DY-12E	Powerex Power Semiconductors	Dual IGBTMOD E-Series Module
2	CM150DY-12H	Mitsubishi Electric Semiconductor	IGBT MODULES
3	CM150DY-12H	Powerex Power Semiconductors	Dual IGBT Module
4	CM150DY-12NF	Mitsubishi Electric Semiconductor	IGBT MODULES
5	CM150DY-24A	Mitsubishi Electric	IGBT MODULES
6	CM150DY-24A	Powerex	Dual IGBT A-Series Module
7	CM150DY-24E	Powerex	Dual IGBT E-Series Module
8	CM150DY-24H	Mitsubishi Electric Semiconductor	IGBT MODULES
9	CM150DY-24H	Powerex Power Semiconductors	Dual IGBT Module
10	CM150DY-24NF	Mitsubishi Electric	IGBT MODULES
11	CM150DY-24NF	Powerex	Dual IGBT NF-Series Module
12	CM150DY-24T	Mitsubishi	IGBT Module

CM150DY-13T - Mitsubishi

CM150DY-13T IGBT Module

Features

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