www.DataSheet4U.com MITSUBISHI IGBT MODULES CM100DY-24A HIGH POWER SWITCHING USE CM100DY-24A ¡IC ....... 100A ¡VCES ............ 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCU.
um collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight
Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value
Ratings 1200 ±20 100 200 100 200 672
–40 ~ +150
–40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310
Unit V V A A W °C °C V N
•m g
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter
(Tj = 25°C)
Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C I.
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM100DY-24H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
2 | CM100DY-24H |
Powerex Power Semiconductors |
Dual IGBT Module | |
3 | CM100DY-24NF |
Mitsubishi Electric Semiconductor |
IGBT Module | |
4 | CM100DY-24T |
Mitsubishi |
IGBT | |
5 | CM100DY-28H |
Powerex Power Semiconductors |
Dual IGBT Module | |
6 | CM100DY-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
7 | CM100DY-12H |
Powerex Power Semiconductors |
Dual IGBT Module | |
8 | CM100DY-34A |
Mitsubishi Electric |
IGBT MODULES | |
9 | CM100DY |
Mitsubishi Electric Semiconductor |
IGBT Module | |
10 | CM100DC-24NFM |
Mitsubishi Electric |
IGBT Module | |
11 | CM100DU-12F |
Powerex Power Semiconductors |
IGBT Module | |
12 | CM100DU-12H |
Mitsubishi Electric Semiconductor |
IGBT MODULES |