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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM1000DU-34NF HIGH POWER SWITCHING USE CM1000DU-34NF q IC .... 1000A q VCES ............. 1700V q Insulated Type q 2-elements in a pack APPLICATION General purpose inverters Servo controls, etc OUTLINE DR.
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature
*3 Isolation voltage Torque strength Weight G-E Short C-E Short TC’ = 104°C Pulse TC = 25°C Pulse TC’ = 25°C Conditions Ratings 1700 ±20 1000 2000 1000 2000 8900
–40 ~ +150
–40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W °C °C V N
•m N
•m g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value
ELECT.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CM1000DX-24T |
Mitsubishi |
IGBT |
|
| 2 | CM1000DXL-24S |
Mitsubishi |
IGBT |
|
| 3 | CM1000DXP-24T |
Mitsubishi |
IGBT |
|
| 4 | CM1000 |
Pan Jit International Inc. |
HIGH CURRENT SILICON BRIDGE RECTIFIERS |
|
| 5 | CM1000 |
TRSYS |
HIGH CURRENT SILICON BRIDGE RECTIFIERS |
|
| 6 | CM1000HA-24H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 7 | CM1000HA-24H |
Powerex Power Semiconductors |
IGBT Module |
|
| 8 | CM1000HA-28H |
Mitsubishi Electric Semiconductor |
IGBT Module |
|
| 9 | CM1000HA-28H |
Powerex Power Semiconductors |
IGBT Module |
|
| 10 | CM1000HA-34S |
Mitsubishi |
IGBT Modules |
|
| 11 | CM1001 |
Pan Jit International Inc. |
HIGH CURRENT SILICON BRIDGE RECTIFIERS |
|
| 12 | CM1001 |
TRSYS |
HIGH CURRENT SILICON BRIDGE RECTIFIERS |
|