CLA50E1200HB - INCHANGE

CLA50E1200HB Thyristors

·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak.

Features

A IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.05 4 mA 1.85 V 1.6 mA 1.5 V 0.25 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CLA50E1200HB NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The product.