Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This advanced high voltage MOSFET is designed to wighstand high 1. GATE 2. DRAIN energy in the avalanche mode and switch efficiently.This new high energy 3. SOURCE device also offers a drain-to-source diode wigh fast recovery time.Desighed 1 23 for high voltage,high speed switching applications such as power supplies,converters,power motor controls an.
.
CJD04N60B - ZPSEMI
This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CJD04N60 |
JCET |
N-Channel Power MOSFET |
|
| 2 | CJD04N60 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 3 | CJD04N60A |
JCET |
N-Channel MOSFET |
|
| 4 | CJD04N60A |
ZPSEMI |
N-Channel Power MOSFET |
|
| 5 | CJD04N65 |
JCET |
N-Channel MOSFET |
|
| 6 | CJD04N65 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 7 | CJD04N65A |
ZPSEMI |
N-Channel Power MOSFET |
|
| 8 | CJD01N60 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 9 | CJD01N60 |
JCET |
N-Channel Power MOSFET |
|
| 10 | CJD01N65B |
ZPSEMI |
N-Channel Power MOSFET |
|
| 11 | CJD01N80 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 12 | CJD02N60 |
JCET |
N-Channel MOSFET |
|