The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURES High power and current handing capability Lead free product is acquired Surface mount package APPLICATION Batter.
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
Battery Switch
DC/DC Converter
MARKING: S10 Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol VDS VGS ID IDM PD RθJA TJ TSTG
Value 60 ±20 3 10 0.35 357 150
-55~+150
Unit V V A A W
℃/W ℃ ℃
C,Jun,2013
Electrical characteristics (Ta=25℃ unless othe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CJ2312 |
JCST |
MOSFETS | |
2 | CJ2301 |
JCST |
MOSFETS | |
3 | CJ2301-HF |
Comchip |
MOSFET | |
4 | CJ2301B |
JCET |
P-Channel MOSFET | |
5 | CJ2301S |
JCET |
P-Channel MOSFET | |
6 | CJ2302 |
JCST |
MOSFETS | |
7 | CJ2302S |
JCST |
MOSFETS | |
8 | CJ2303 |
JCST |
MOSFETS | |
9 | CJ2304 |
JCST |
MOSFETS | |
10 | CJ2305 |
JCST |
MOSFETS | |
11 | CJ2306 |
JCST |
MOSFETS | |
12 | CJ2307 |
JCST |
MOSFETS |