JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 Dual 40V complementary transistors FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT SOT-23-6L Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25℃) Symbol VCBO VCEX VCEO VEBO IC ICM .
z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT SOT-23-6L Tr1 NPN and Tr2 PNP Absolute Maximum Ratings (Ta=25℃) Symbol VCBO VCEX VCEO VEBO IC ICM PC RθJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current- Peak Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Value NPN PNP 40 -40 40 -40 30 -30 7 -7 1.5 -1.5 5 -5 350 350 357 357 150 -55~+15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CJ201NL |
ZPSEMI |
NPN Transistor | |
2 | CJ201NL |
JCST |
NPN Transistor | |
3 | CJ2101 |
ZPSEMI |
P-Channel MOSFET | |
4 | CJ2101 |
JCST |
MOSFETS | |
5 | CJ2101-G |
Comchip |
MOSFET | |
6 | CJ2102 |
ZPSEMI |
N-Channel 20-V(D-S) MOSFET | |
7 | CJ2102 |
JCST |
MOSFETS | |
8 | CJ2301 |
JCST |
MOSFETS | |
9 | CJ2301-HF |
Comchip |
MOSFET | |
10 | CJ2301B |
JCET |
P-Channel MOSFET | |
11 | CJ2301S |
JCET |
P-Channel MOSFET | |
12 | CJ2302 |
JCST |
MOSFETS |