Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE.
CIL351 CIL352 IC=10mA, IB=0.5mA IC=100mA, IB=5mA Base Emitter on Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency VBE (on) IC=10mA, VCE=5V
MIN 70 75 6.0
TYP
MAX
UNIT V V V
25 100 200 250 480 0.25 0.60 1.0
nA
Collector Emitter Saturation Voltage
*VCE (sat)
V V V
SYMBOL fT
TEST CONDITION IC=10mA, VCE=5V, f=100MHz
MIN
TYP 100
MAX
UNIT MHz
*Pulse Condition: Pulse Width <300µ s, Duty Cycle <2%
CIL351_352Rev_1 120504E
Continental Device India Limited
Data Sheet
Page 1 of 3
CIL351/352 TO-18 Metal Can Package TO-18 Metal Can Package
A B
G
2 K 1 H L J D 3 F
3
2
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CIL351 |
CDIL |
(CIL351 / CIL352) NPN SILICON PLANAR TRANSISTORS | |
2 | CIL |
ETC |
the CIL Series has excellent Q characteristics and eliminate crosstalk | |
3 | CIL147 |
CDIL |
(CILxxx) Epoxy Transistors | |
4 | CIL187 |
CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
5 | CIL21N82xxx |
Samsung Electronics |
CIL Series | |
6 | CIL2328 |
Continental Device India Limited |
(CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS | |
7 | CIL5xx |
CDIL |
(CILxxx) Epoxy Transistors | |
8 | CIL6xx |
CDIL |
(CILxxx) Epoxy Transistors | |
9 | CIL7xx |
CDIL |
(CILxxx) Epoxy Transistors | |
10 | CIL928A |
Continental Device India Limited |
(CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS | |
11 | CIL9xx |
CDIL |
(CILxxx) Epoxy Transistors | |
12 | CILxxxxxxx |
ETC |
the CIL Series has excellent Q characteristics and eliminate crosstalk |