CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy parallel operation. • Short collector time-5us. • High current capability. • High input impedance. • Low saturation voltage : VCE(sat) = 1.65@25OC. • Fast switching : 20KHz ~ 40KHz(Ta = 25OC). • Suffix "G" indicates Halogen-free part, ex.CI15T60G. ■ Mechanical dat.
• Positive temperature Co-efficient for easy parallel operation.
• Short collector time-5us.
• High current capability.
• High input impedance.
• Low saturation voltage : VCE(sat) = 1.65@25OC.
• Fast switching : 20KHz ~ 40KHz(Ta = 25OC).
• Suffix "G" indicates Halogen-free part, ex.CI15T60G.
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Outline
TO-220AB
0.420(10.66) 0.386(9.80)
0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CI160808 |
BOURNS |
Multi-Layer Chip Inductors | |
2 | CI-B1005-10NSJT |
Ceratech |
CHIP CERAMIC INDUCTORS | |
3 | CI-B1005-xxxxJx |
Ceratech |
CHIP CERAMIC INDUCTORS | |
4 | CI-B1608-xxxxJx |
Ceratech |
CHIP CERAMIC INDUCTORS | |
5 | CI-B2012-xxxxJx |
Ceratech |
CHIP CERAMIC INDUCTORS | |
6 | CI201210 |
Bourns Electronic |
Multi-Layer Chip Inductors | |
7 | CI20T120P |
CITC |
20A 1200V Field Stop Trench IGBT | |
8 | CI40T120P |
CITC |
40A 1200V Field Stop Trench IGBT | |
9 | CIB10J300 |
Samsung |
Chip Bead | |
10 | CIB10P100 |
Samsung |
Chip Bead | |
11 | CIB10P220 |
Samsung |
Chip Bead | |
12 | CIB10P260 |
Samsung |
Chip Bead |