Wolfspeed’s CGHV14800F1 is an 800W packaged, partially-matched transistor utilizing Wolfspeed’s high performance, 0.4um GaN on SiC production process. The CGHV14800F1 operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. The CGHV14800F1 typically achieves 800 W of saturated output power with 14 dB of large s.
• Psat: 800 W
• DE: 65 %
• LSG: 14 dB
• S21: 18 dB
• S11: -12 dB
• S22: -5 dB
• Long pulse operation
Note: Features are typical performance via a 1.2-1.4 GHz reference design under 25C, pulsed operation (CGHV14800F1-AMP). Please reference performance charts for additional information.
Applications
• Avionics - TACAN, DME, IFF
• L-band Radar
• General purpose amplification
Rev. 0.0
– July 2022
4600 Silicon Drive | Durham, NC 27703 | Wolfspeed.com
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CGHV14800F |
Cree |
GaN HEMT | |
2 | CGHV14800 |
Cree |
GaN HEMT | |
3 | CGHV14800 |
Wolfspeed |
GaN HEMT | |
4 | CGHV14250 |
Cree |
GaN HEMT | |
5 | CGHV14500 |
Cree |
GaN HEMT | |
6 | CGHV1F006S |
Cree |
GaN HEMT | |
7 | CGHV1F006S |
Wolfspeed |
GaN HEMT | |
8 | CGHV1F025S |
MACOM |
GaN HEMT | |
9 | CGHV1F025S |
Wolfspeed |
GaN HEMT | |
10 | CGHV1F025S |
Cree |
GaN HEMT | |
11 | CGHV1J006D |
Wolfspeed |
GaN HEMT Die | |
12 | CGHV1J006D |
Cree |
GaN HEMT Die |