CEP95P04/CEB95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP.
-40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Ran.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP9055 |
CET |
N-Channel MOSFET | |
2 | CEP9060N |
CET |
N-Channel MOSFET | |
3 | CEP9060R |
CET |
N-Channel MOSFET | |
4 | CEP911 |
Sumida Corporation |
ADSL Transformer | |
5 | CEP912 |
Sumida Corporation |
ADSL Transformer | |
6 | CEP93A3 |
CET |
N-Channel MOSFET | |
7 | CEP9926 |
CET |
N-Channel MOSFET | |
8 | CEP9N25 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | CEP01N6 |
CET |
N-Channel MOSFET | |
10 | CEP01N65 |
CET |
N-Channel MOSFET | |
11 | CEP01N6G |
CET |
N-Channel MOSFET | |
12 | CEP02N6 |
Chino-Excel Technology |
N-channel Enhancement Mode Field Effect Transistor |