CEM4426 - VBsemi

CEM4426 N-Channel MOSFET

CEM4426-VB CEM4426-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.025 at VGS = 10 V 0.035 at VGS = 4.5 V ID (A)d 7.6 6.5 Qg (Typ.) 10.5 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Opt.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Optimized for “Low Side” Synchronous Rectifier Operation
• 100 % Rg and UIS Tested APPLICATIONS
• CCFL Inverter ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum .