CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S.
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 15.2 60 60 0.48 Operating and Store Temperature .
CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEB16N10 |
CET |
N-Channel MOSFET | |
2 | CEB1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
3 | CEB1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
4 | CEB10N4 |
CET |
N-Channel MOSFET | |
5 | CEB10N6 |
CET |
N-Channel MOSFET | |
6 | CEB110P03 |
CET |
P-Channel MOSFET | |
7 | CEB1165 |
CET |
N-Channel MOSFET | |
8 | CEB1175 |
CET |
N-Channel MOSFET | |
9 | CEB1185 |
CET |
N-Channel MOSFET | |
10 | CEB1186 |
CET |
N-Channel MOSFET | |
11 | CEB1195 |
CET |
N-Channel MOSFET | |
12 | CEB12N5 |
CET |
N-Channel MOSFET |