CE1F3P - NEC

CE1F3P on-chip resistor NPN silicon epitaxial transistor

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Features

• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ
• Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
* IB(DC) PT Tj Tstg Ratings 60±10 60±10 15 ±2.0 ±3.0 0.03 1.0 150 −55 to +150 Unit V.