The CDP1821C/3 is a 1024-word x 1-bit CMOS silicon-on-sapphire (SOS), fully static, random-access memory designed for use in CDP1800 microprocessor systems. This device has a recommended operating voltage range of 4V to 6.5V. The output state of the CDP1821C/3 is a function of the input address and chip-select states only. Valid data will appear at the outpu.
• Static CMOS Silicon-On-Sapphire Circuitry CD4000Series Compatible
• Compatible with CDP1800-Series Microprocessors at Maximum Speed
• Fast Access Time. . . . . . . . . . . 100ns Typ. at VDD = 5V
• Single Voltage Supply
• No Precharge or External Clocks Required
• Low Quiescent and Operating Power
• Separate Data Inputs and Outputs
• High Noise Immunity . . . . . . . . . . . . . . . . . . 30% of VDD
• Memory Retention for Standby Battery Voltage Down to 2V at +25oC
• Latch-Up-Free Transient-Radiation Tolerance
Ordering Information
PACKAGE SBDIP TEMP. RANGE -55oC to +125oC PART NUMBER CDP1821.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CDP1821C3 |
Intersil Corporation |
High-Reliability CMOS 1024-Word x 1-Bit Static RAM | |
2 | CDP1822 |
Intersil Corporation |
256-Word x 4-Bit LSI Static RAM | |
3 | CDP1822 |
GE |
256-Word by 4-Bit LSI Static Random-Access Memory | |
4 | CDP1822C |
Intersil Corporation |
High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM | |
5 | CDP1822C |
GE |
256-Word by 4-Bit LSI Static Random-Access Memory | |
6 | CDP1822C3 |
Intersil Corporation |
High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM | |
7 | CDP1823 |
Intersil Corporation |
128-Word x 8-Bit LSI Static RAM | |
8 | CDP1823 |
GE |
128-Word x 8-Bit Static Random-Access Memory | |
9 | CDP1823C |
Intersil Corporation |
High-Reliability CMOS 128-Word x 8-Bit Static RAM | |
10 | CDP1823C |
GE |
128-Word x 8-Bit Static Random-Access Memory | |
11 | CDP1824 |
Intersil Corporation |
32-Word x 8-Bit Static RAM | |
12 | CDP1824 |
GE |
32-Word x 8-Bit Static Random-Access Memory |