CD3001 - Continental

CD3001 NPN Silicon Planar Epitaxial Transistor

SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage CEO VEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak (1) PC Collector Power Dissipation T , Operating and Storage Junction j Tstg Temperature Range (1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10% VALUE 500 400 9.0 0.5 1.5 900 - 55 to +150 UNIT V V V A mW ºC ELECTRICAL CHARA.

Features

serves the right to ship any of the groups according to production availability. MARKING SYMBOL VCBO VCEO VEBO ICBO ICEO IEBO hFE
* hFE VCE(sat) VBE(sat) fT tf ts A 10-15 TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=500V, IE = 0 VCE=400V, IB = 0 VEB=9V, IC=0 VCE=20V, IC=20mA VCE=10V, IC=0.25mA IC=50mA, IB=10mA IC=50mA, IB=10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V B 15-20 C 20-25 MIN 500 400 9 TYP MAX UNIT V V V µA µA 100 200 100 10 5 40 0.5 1.2 8 0.3 1.5 V V MHz µs D 25-30 E 30-35 F 35-40 CD 13001 A CD 13001 B CD 13001 C CD 13001 D CD 13001 E CD 1300.