CAS100H12AM1 - Cree

CAS100H12AM1 100A Silicon Carbide Half-Bridge Module

CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features Package VDS 1.2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 125˚C) 16 mΩ 1.8 mJ • • • • • • • • • • • • • • • • Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positi.

Features

Package VDS 1.2 kV RDS(on) (TJ = 25˚C) EOFF (TJ = 125˚C) 16 mΩ 1.8 mJ
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• Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Baseplate, AMB Si3N4 Substrate System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications High Power Converters Motor Drives Solar Inverters UPS and SMPS Ind.